IXTP2N100 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTP2N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.5Ω@VGS=10V ·Fully characterized avalanche volta

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7Ω@VGS=10V ·Fully characterized avalanche voltage and current

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High Voltage MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA2N100 IXTP2N100 VDSS = ID25 = ≤RDS(on) 1000V 2A 7Ω TO-263 (IXTA) Symbol VDSS V

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2N100P IXTA2N100P IXTP2N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD

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