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IXTP62N15P - PolarHT Power MOSFET

This page provides the datasheet information for the IXTP62N15P, a member of the IXTQ62N15P PolarHT Power MOSFET family.

Features

  • l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150° C Characteristic Values Min. Typ. Max. 150 3.0 5.5 ±100 25 250 33 40 V V nA µA µA mΩ l l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d.

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www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 62N15P IXTP 62N15P IXTQ 62N15P VDSS ID25 RDS(on) = 150 V = 62 A ≤ 40 mΩ TO-263 (IXTA) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 10 Ω TC = 25° C Maximum Ratings 150 150 ±20 ±30 62 150 50 30 1.0 10 350 -55 ... +175 175 -55 ...
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