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IXYS Corporation

IXTP62N15P Datasheet Preview

IXTP62N15P Datasheet

PolarHT Power MOSFET

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PolarHTTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA 62N15P
IXTP 62N15P
IXTQ 62N15P
www.DataSheet4U.com
VDSS =
ID25 =
RDS(on)
150
62
40
V
A
m
TO-263 (IXTA)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 M
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150° C, RG = 10
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P / TO-220)
TO-3P
TO-220
TO-263
150 V
150 V
GS
±20 V
±30 V TO-220 (IXTP)
62 A
150 A
50 A
30 mJ
G DS
1.0 J
TO-3P (IXTQ)
10 V/ns
(TAB)
(TAB)
350 W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300 °C
2600
°C
1.13/10 Nm/lb.in.
5.5 g
4g
3g
G
DS
G = Gate
S = Source
Features
(TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
150 V
VGS(th)
VDS = VGS, ID = 250µA
3.0 5.5 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
33 40 m
l International standard packages
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99154E(12/05)




IXYS Corporation

IXTP62N15P Datasheet Preview

IXTP62N15P Datasheet

PolarHT Power MOSFET

No Preview Available !

IXTA 62N15P IXTP 62N15P
IXTQ 62N15P
www.DataSheet4U.com
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
14 24
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
2250
660
185
pF
pF
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 10 (External)
27 ns
38 ns
76 ns
35 ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
70 nC
20 nC
38 nC
(TO-3P)
(TO-220)
0.21
0.25
0.42° C/W
° C/W
° C/W
TO-3P (IXTQ) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d2 %
62 A
150 A
1.5 V
trr IF = 25 A, -di/dt = 100 A/µs
QRM VR = 100 V, VGS = 0 V
150 ns
2.0 µC
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
6,710,405B2 6,759,692
6,710,463
6,771,478 B2


Part Number IXTP62N15P
Description PolarHT Power MOSFET
Maker IXYS Corporation
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IXTP62N15P Datasheet PDF






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