Download the IXTQ220N075T datasheet PDF.
This datasheet also covers the IXTH220N075T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values Min. Typ. Max. 75 V
2.0 4.0 V
± 200 nA
5 μA 250 μA 3.6 4.5 mΩ
Advantages Easy to mou.
Note: The manufacturer provides a single datasheet file (IXTH220N075T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IXTQ220N075T (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTQ220N075T. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH220N075T IXTQ220N075T VDSS = ID25 = RDS(on) ≤ 75 220 4.5 V A mΩ T...
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IXTH220N075T IXTQ220N075T VDSS = ID25 = RDS(on) ≤ 75 220 4.5 V A mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 75 75 ± 20 220 75 600 25 1.0 VG V DS V A TO-3P (IXTQ) A A A J (TAB) 3 480 -55 ... +175 175 -55 ...
IXTQ220N075T Datasheet
