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IXYS Corporation
IXYS Corporation

IXTQ23N60Q Datasheet Preview

IXTQ23N60Q Datasheet

Power MOSFETs Q-Class

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IXTQ23N60Q pdf
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Power MOSFETs
Q-Class
IXTQ 23N60Q
VDSS = 600 V
ID25 = 23 A
RDS(on) = 0.32
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt,
Low Gate Charge and Capacitances
Preliminary Data Sheet
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
600 V
600 V
±30 V
±40 V
23 A
92 A
23 A
30 mJ
1.5 J
5 V/ns
400 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ.
Max.
600 V
VGS(th)
VDS = VGS, ID = 250 µA
2.5 4.5 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
1 mA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
0.32
TO-3P (IXTQ)
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z IXYS advanced low gate charge
process
z International standard package
z Low gate charge and capacitance
- easier to drive
- faster switching
z Low RDS (on)
z Unclamped Inductive Switching (UIS)
rated
z Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z Easy to mount
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS99080(08/03)



IXYS Corporation
IXYS Corporation

IXTQ23N60Q Datasheet Preview

IXTQ23N60Q Datasheet

Power MOSFETs Q-Class

No Preview Available !

IXTQ23N60Q pdf
IXTQ 23N60Q
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
Min. Typ. Max.
TO-3P Outline
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1.5 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
10 20
3300
410
130
20
20
45
20
90
20
45
0.31
0.25
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive; pulse width limited by TJM
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
23 A
92 A
1.5 V
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V
500 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343


Part Number IXTQ23N60Q
Description Power MOSFETs Q-Class
Maker IXYS Corporation
Total Page 4 Pages
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