Full PDF Text Transcription for IXTQ23N60Q (Reference)
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IXTQ23N60Q. For precise diagrams, and layout, please refer to the original PDF.
rce On-Resistance : RDS(on) = 320mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 23 A IDM Drain Current-Single Plused 92 A PD Total Dissipation @TC=25℃ 400 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.
IXTQ23N60Q Datasheet
