Datasheet4U Logo Datasheet4U.com

IXTQ23N60Q - Power MOSFETs Q-Class

Features

  • z 1.6 mm (0.062 in. ) from case for 10 s Mounting torque 300 6 1.13/10 Nm/lb. in. Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 600 2.5 4.5 ±100 25 1 0.32 V V nA µA mA Ω IXYS advanced low gate charge process z International standard package z Low gate charge and capacitance - easier to drive - faste.

📥 Download Datasheet

Datasheet preview – IXTQ23N60Q

Datasheet Details

Part number IXTQ23N60Q
Manufacturer IXYS Corporation
File Size 560.15 KB
Description Power MOSFETs Q-Class
Datasheet download datasheet IXTQ23N60Q Datasheet
Additional preview pages of the IXTQ23N60Q datasheet.

📁 Similar Datasheet

Other Datasheets by IXYS Corporation

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Power MOSFETs Q-Class IXTQ 23N60Q VDSS ID25 RDS(on) = = = 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 23 92 23 30 1.5 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C g TO-3P (IXTQ) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z 1.6 mm (0.062 in.
Published: |