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IXTQ280N055T - Power MOSFET

Download the IXTQ280N055T datasheet PDF. This datasheet also covers the IXTH280N055T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • D = Drain TAB = Drain International standard packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Advantages Easy to mount Space savings High power density.

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Note: The manufacturer provides a single datasheet file (IXTH280N055T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTQ280N055T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTQ280N055T. For precise diagrams, and layout, please refer to the original PDF.

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH280N055T IXTQ280N055T VDSS = ID25 = RDS(on) ≤ 55V 280A 3.2mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID...

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ID25 = RDS(on) ≤ 55V 280A 3.2mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.