IXTT88N30P Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXTT88N30P datasheet PDF. This datasheet also includes the IXTH88N30P variant, as both parts are published together in a single manufacturer document.

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IXTT88N30P power mosfet by IXYS (now Littelfuse) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IXTH88N30P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IXTT88N30P
Manufacturer	IXYS (now Littelfuse)
File Size	608.38 KB
Description	Power MOSFET
Download	IXTT88N30P Download (PDF)

Overview

www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTH 88N30P IXTT 88N30P RDS(on) VDSS = 300 ID25 = 88 = 40 mΩ V A Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 300 300 ± 20 V V V A A A A mJ J V/ns W °C °C °C °C TO-247 (IXTH) D (TAB) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 88 75 220 60 60 2.0 10 600 -55 ...

+150 150 -55 ...

Key Features

z z 1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-247 TO-264 TO-268 300 1.13/10 Nm/lb. in. 6 10 5 g g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	IXTT88N30P	PolarHT Power MOSFET	IXYS

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