IXYS IXTT88N30P
PolarHT Power MOSFET
MAXIMUM RATINGS
300 V 300 V G D S ±20 V TO-264 (IXTK) ±30 V 88 A 75 A 220 A 60 A 60 mJ G D S 2.0 J TO-3P (IXTQ) 10 V/ns 600 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6.0 g 10 g 5.5 g G DS TO-268 (IXTT) G S D (TAB) D (TAB) (TAB) D (TAB) Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BV DSS V GS = 0 V, I D = 250 µA Characteristic Values Min. Typ. Max. 300 V VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS V =0V GS T J = 125° C 100 µA 1 mA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 40 m Ω G = Gate S = Source D = Drain TAB = DrainFEATURES
l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99129E(12/05) Symbol gfs Ciss Coss Crss t d(on) tr td(off) tf Qg(on) Q gs Q gd RthJC RthCS RthCS IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P Test Conditions Characteristic Values (T J = 25° C unless otherwise specified) Min.