IXYS IXTT88N30P
Power MOSFET
IXTT88N30P Specifications
- Package : TO-268
- Mount Type : Surface Mount
- Breakdown Voltage : 300V
- RDS(on) Max : 40mΩ
- Input Capacitance : 6.3nF
- Terminals : 2
- Reverse Recovery Time : 250ns
- Channels : 1
- Rise Time : 24ns
- Fall Time : 25ns
- Max Power Dissipation : 600W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IXTT88N30P |
|---|---|
| Datasheet | IXTT88N30P Download |
| Manufacturer |  IXYS |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
300 300 ± 20 V V V A A A A mJ J V/ns W °C °C °C °C TO-247 (IXTH) D (TAB) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 88 75 220 60 60 2.0 10 600 -55 ... +150 150 -55 ... +150 TO-268 (IXTT) G S D (TAB) G = Gate S = Source D = Drain TAB = DrainFEATURES
z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 TO-268 300 1.13/10 Nm/lb.in. 6 10 5 g g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±100 25 250 40 V V nA µA µA mΩ z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % PolarHTTM DMOS transistors utilize proprietary designs and process.
