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IXTV280N055TS - Power MOSFET

Download the IXTV280N055TS datasheet PDF. This datasheet also covers the IXTV280N055T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTV280N055T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTV280N055TS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTV280N055TS. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information TrenchMVTM Power MOSFET IXTV 280N055T IXTV 280N055TS N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 280 3.2 V A m...

View more extracted text
ancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 280 3.2 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 3.3 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force (PLUS220) Maximum Ratings 55 V 55 V ± 20 V 280 A 75 A 600 A 40 A 1.5 J 3 V/ns 550 -55 ... +175 175 -55 ... +175 300 260 11...65 /2.5...15 3 W °C °

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