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IXTV230N085T - Power MOSFET

Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C RDS(on) VGS = 10 V, ID = 50 A, Notes 1, 2 Characteristic Values Min. Typ. Max. 85 V 2.0 4.0 V ± 200 nA 5 µA 250 µA 3.7 4.4 mΩ Advantages Easy to.

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Datasheet Details

Part number IXTV230N085T
Manufacturer IXYS Corporation
File Size 287.03 KB
Description Power MOSFET
Datasheet download datasheet IXTV230N085T Datasheet
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Preliminary Technical Information TrenchMVTM Power MOSFET IXTV230N085T IXTV230N085TS N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 230 4.4 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 3.3 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force (PLUS220) Maximum Ratings 85 V 85 V PLUS220 (IXTV) ± 20 230 75 520 V A G DS A PLUS220SMD (IXTV_S) A D (TAB) 40 A 1.0 J 3 550 -55 ... +175 175 -55 ... +175 300 260 11...65 /2.5...
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