Preliminary Technical Information TrenchMVTM Powe.
IXTV230N085T - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET IXTV230N085T IXTV230N085TS N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(.IXTV230N085TS - Power MOSFET
Preliminary Technical Information TrenchMVTM Power MOSFET IXTV230N085T IXTV230N085TS N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(.IXTV230N085T - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.4mΩ(Max) ·Fast Swi.