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MDD220 - HIgh Power Diode

Features

  • Direct copper bonded Al2O3 -ceramic base plate.
  • Planar passivated chips.
  • Isolation voltage 3600 V~.
  • UL registered, E 72873.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MDD 220 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 800-1800 V 3 1 2 2 1 3 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Type MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 MDD 220-18N1 Symbol IFRMS IFAVM IFSM Conditions TVJ = TVJM TC = 100°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 450 270 8500 9000 7500 8000 360 000 340 000 280 000 260 000 -40...+150 150 -40...
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