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IXYS Corporation

MKI50-12E7 Datasheet Preview

MKI50-12E7 Datasheet

Short Circuit SOA Capability Square RBSOA

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MWI 50-12 E7
MKI 50-12 E7
IGBT Modules
Sixpack, H Bridge
Short Circuit SOA Capability
Square RBSOA
IC25 = 90 A
VCES
= 1200 V
VCE(sat) typ. = 1.9 V
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
t
SC
Ptot
Symbol
VCE(sat)
V
GE(th)
ICES
IGES
t
d(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
R
thJC
13
1 59
2 6 10
3 7 11
4 8 12
17
MWI
13
1
2
16
15
14
3
4
17
9
10
11
12
MKI
16
14
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
± 20
V
V
TC = 25°C
TC = 80°C
VGE = ±15 V; RG = 22 ; TVJ = 125°C
RBSOA; clamped inductive load; L = 100 µH
V
CE
=
900
V;
VGE
=
±15
V;
R
G
=
22
;
TVJ
=
125°C
SCSOA; non-repetitive
90
62
100
VCES
10
A
A
A
µs
TC = 25°C
350 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
I = 2 mA; V = V
C GE CE
VCE = VCES;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 50 A
V
GE
=
±15
V;
R
G
=
22
1.9 2.4 V
2.1 V
4.5 6.5 V
0.8 mA
0.8 mA
200 nA
80 ns
50 ns
680 ns
30 ns
6.0 mJ
4.0 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 50 A
(per IGBT)
3.8 nF
350 nC
0.35 K/W
Features
• NPT3 IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
• HiPerFREDTM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
- UL registered, E 72873
Typical Applications
• MWI
- AC drives
- power supplies with power factor
correction
• MKI
- motor control
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
- supply of transformer primary winding
. power supplies
. welding
. X-ray
. battery charger
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-4




IXYS Corporation

MKI50-12E7 Datasheet Preview

MKI50-12E7 Datasheet

Short Circuit SOA Capability Square RBSOA

No Preview Available !

www.DataSheet4U.com
MWI 50-12 E7
MKI 50-12 E7
Diodes
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
110 A
70 A
Equivalent Circuits for Simulation
Conduction
Symbol
VF
IRM
trr
RthJC
Conditions
IF = 50 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IF = 50 A; diF/dt = -500 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
(per diode)
Characteristic Values
min. typ. max.
2.2 2.6 V
1.6 V
40 A
200 ns
0.61 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.95 V; R0 = 24 m
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 6 m
Thermal Response
Module
Symbol
TVJ
TVJM
T
stg
VISOL
Md
Symbol
Conditions
operating
IISOL 1 mA; 50/60 Hz
Mounting torque (M5)
Conditions
Rpin-chip
dS
dA
R
thCH
Weight
Creepage distance on surface
Strike distance in air
with heatsink compound
Maximum Ratings
-40...+125
-40...+150
-40...+125
°C
°C
°C
2500
V~
2.7 - 3.3
Nm
Characteristic Values
min. typ. max.
5 m
6 mm
6 mm
0.02 K/W
180 g
IGBT (typ.)
Cth1 = 0.22 J/K; Rth1 = 0.26 K/W
Cth2 = 1.74 J/K; Rth2 = 0.09 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.151 J/K; Rth1 = 0.483 K/W
Cth2 = 1.003 J/K; Rth2 = 0.127 K/W
Dimensions in mm (1 mm = 0.0394")
© 2004 IXYS All rights reserved
pins 5, 6, 7, 8 and 15 for MWI only
pins 5, 6, 7, 8 and 15 for MWI only
2-4


Part Number MKI50-12E7
Description Short Circuit SOA Capability Square RBSOA
Maker IXYS Corporation
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