* HiPerFETTM technology - low RDSon - dv/dt ruggedness - fast intrinsic reverse diode
* package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals for easy d
VMO580-02F Datasheet (49.19 KB)
VMO580-02F
IXYS Corporation
49.19 KB
N-channel mosfet.
HipPerFETTM Module N-Channel Enhancement Mode VMO 580-02F VDSS ID25 RDS(on) = 200 V = 580 A = 3.8 mΩ D S D G KS G KS S Preliminary Data MOSFET.
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