IXYS Corporation

VUO22-12NO1 Datasheet Preview

VUO22-12NO1 Datasheet

Standard Rectifier Module

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Standard Rectifier Module

3~ Rectifier Bridge

Part number

VUO22-12NO1

4/5

6 8 10

1/2

VUO22-12NO1

Rectifier

VRRM =

I DAV =

I FSM =

1200 V

30 A

150 A

Features / Advantages:

● Package with DCB ceramic

● Reduced weight

● Improved temperature and power cycling

● Planar passivated chips

● Very low forward voltage drop

● Very low leakage current

Applications:

● Diode for main rectification

● For three phase bridge configurations

● Supplies for DC power equipment

● Input rectifiers for PWM inverter

● Battery DC power supplies

● Field supply for DC motors

Package: V1-A-Pack

● Isolation Voltage: 3600 V~

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Height: 17 mm

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130515b

IXYS Corporation

VUO22-12NO1 Datasheet Preview

VUO22-12NO1 Datasheet

Standard Rectifier Module

No Preview Available !

Rectifier

Symbol

VRSM

VRRM

I DAV

Definition

Conditions

max. non-repetitive reverse blocking voltage

max. repetitive reverse blocking voltage

reverse current

VR = 1200 V

forward voltage drop

IF = 10 A

IF = 30 A

IF = 10 A

IF = 30 A

bridge output current

TC = 110°C

rectangular

d=⅓

VF0

R thJC

R thCH

Ptot

I FSM

threshold voltage

slope resistance

for power loss calculation only

thermal resistance junction to case

thermal resistance case to heatsink

total power dissipation

max. forward surge current

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

I²t value for fusing

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

CJ junction capacitance

VR = 400 V; f = 1 MHz

VUO22-12NO1

TVJ = 25°C

TVJ = 150°C

TVJ = 25°C

TVJ = 125°C

TVJ = 150°C

Ratings

min. typ. max.

1300

1200

0.7

1.19

1.59

1.13

1.66

Unit

µA

TVJ = 150°C

TC = 25°C

TVJ = 45°C

VR = 0 V

TVJ = 150°C

VR = 0 V

TVJ = 45°C

VR = 0 V

TVJ = 150°C

VR = 0 V

TVJ = 25°C

0.84 V

28 mΩ

2.5 K/W

0.4 K/W

50 W

150 A

160 A

130 A

140 A

115 A²s

105 A²s

85 A²s

82 A²s

4 pF

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130515b

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VUO22-12NO1 Datasheet Preview

VUO22-12NO1 Datasheet

Standard Rectifier Module

VUO22-12NO1 Datasheet Preview

VUO22-12NO1 Datasheet

Standard Rectifier Module

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