VUO50-14NO3 Datasheet | IXYS

Features / Advantages: - Package with DCB ceramic - Improved temperature and power cycling - Planar passivated chips - Very low forward voltage drop - Very low leakage current Applications: - Diode for main rectification - For three phase bridge configurations - Supplies for DC power equipment - Input rectifiers for PWM inverter - Battery DC power supplies - Field supply for DC motors Package: FO-F - Isolation Voltage: 3600 V~ - Industry standard outline - Ro HS pliant - ¼“ fast-on terminals - Easy to mount with two screws - Base plate: DCB ceramic - Reduced weight - Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read plete Disclaimer Notice at .littelfuse./disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191219c Rectifier Symbol VRSM VRRM IR VF I DAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current forward voltage drop bridge output current VR = 1400 V VR = 1400 V IF = 20 A IF = 60 A IF = 20 A IF = 60 A TC = 110°C rectangular d =⅓ VF0 r F R th JC R th CH Ptot I FSM threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine I²t value for fusing t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine CJ junction capacitance VR = 400 V; f = 1 MHz TVJ = 25°C TVJ = 25°C...