ICE10N65 mosfet equivalent, n-channel enhancement mode mosfet.
* Low rDS(on)
* Ultra Low Gate Charge
* High dv/dt capability
* High Unclamped Inductive Switching (UIS) capability
* High peak current capability
in process in the USA and the above listed countries.
SP-10N65-000-7 06/26/2014
8
ICE10N65
Marking Information
YY =.
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