ICE10N65FP Datasheet PDF

FEATURES

: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems

MAXIMUM RATINGS

@ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 9.5A 650V 0.35Ω 41nC Pin

DESCRIPTION

: TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 9.5 28.5 340 5 50 ±20 ±30 35 -55 to +150 50 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 8.3A Limited by Tjmax VDS = 480V, ID = 9.5A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 2.5 screws Symbol Parameter Values Min Typ Max Unit Conditions Thermal Chara...