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ICE10N65FP

Manufacturer: Micross

ICE10N65FP datasheet by Micross.

ICE10N65FP datasheet preview

ICE10N65FP Datasheet Details

Part number ICE10N65FP
Datasheet ICE10N65FP-MicrossComponentspdf
File Size 708.14 KB
Manufacturer Micross
Description N-Channel MOSFET
ICE10N65FP page 2 ICE10N65FP page 3

ICE10N65FP Overview

TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source.

ICE10N65FP Key Features

  • 55 to +150 50
  • 0.35 0.38
  • RGS Gate Resistance
  • 600 -5- 12 -6- 3.5
  • nC VDS = 480V, ID = 9.5A, VGS = 0 to 10V
  • 0.9 1.2
  • V VGS = 0V, IS = IF ns

ICE10N65 from other manufacturers

View ICE10N65 datasheet index

Brand Logo Part Number Description Other Manufacturers
Icemos Logo ICE10N65 N-Channel Enhancement Mode MOSFET Icemos
Micross logo - Manufacturer

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