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ICE10N65
ICE10N65 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems
HALOGEN
FREE
ID V(BR)DSS rDS(on)
Qg
Product Summary
TA=25oC ID=250uA VGS=10V VDS=480V
9.5A 650V 0.35 41nC
D
Max Min Typ Typ
G S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal Heatsink
1=Gate, 2=Drain,
3=Source.
ICE10N65 Datasheet
