ICE10N65 Description
ICE10N65 ICE10N65 N-Channel Enhancement Mode MOSFET.
ICE10N65 Key Features
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Increased transconductance performance
- Optimized design for high performance power systems
- 1.3 oC/W
- 260 oC
- Gate resistance