ICE20N170B

The ICE20N170B is N-Channel Enhancement Mode MOSFET designed by Icemos.

Product Overview

Icemos

Part number	ICE20N170B
Manufacturer	Icemos
File Size	634.59 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	ICE20N170B_Icemos.pdf
Additional preview pages of the ICE20N170B datasheet.

Low rDS(on).
Ultra Low Gate Charge.
High dv/dt capability.
High Unclamped Inductive Switching (UIS) capability.
High peak current capability.
Increased transconductance performance.
Optimized design for high performance power systems Product Summary ID V(BR)DSS rDS(on) Qg TA=25oC ID=250uA VGS=10V VDS=480V D 20A 600V 0.17Ω 62nC Max Min Typ Typ G S T0263 Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source. ICEMOS AND ITS SISTER COMP.

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Published: Oct 8, 2013 |