• Part: ICE20N170FP
  • Manufacturer: Micross
  • Size: 965.51 KB
Download ICE20N170FP Datasheet PDF
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ICE20N170FP Description

TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt.

ICE20N170FP Key Features

  • 55 to +150 50
  • RthJA Thermal Resistance, Junction to Ambient
  • lowed At Leads
  • IGSS RDS(on)
  • RGS Gate Resistance
  • °C/W °C
  • 980 -9- 19
  • nC VDS = 480V, ID = 20A, VGS = 10V
  • 0.9 1.2
  • V VGS = 0V, IS = IF ns