ICE20N170U - N-Channel Enhancement Mode MOSFET

Icemos

Key Features

Low rDS(on).
Ultra Low Gate Charge.
High dv/dt capability.
High Unclamped Inductive Switching (UIS) capability.
High peak current capability.
Increased transconductance performance.
Optimized design for high performance power systems Product Summary ID V(BR)DSS rDS(on) Qg TA=25oC ID=250uA VGS=10V VDS=480V D 20A 600V 0.17Ω 62nC Max Min Typ Typ G S T0262 Standard Metal Heatsink 1=Gate, 2&4=Drain, 3=Source. ICEMOS AND ITS SISTER CO.

ICE20N170U n-channel enhancement mode mosfet by Icemos - Datasheet Preview

Datasheet Details

Part number	ICE20N170U
Manufacturer	Icemos
File Size	689.61 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	ICE20N170U Datasheet

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Preliminary Data Sheet ICE20N170U ICE20N170U N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems Product Summary ID V(BR)DSS rDS(on) Qg TA=25oC ID=250uA VGS=10V VDS=480V D 20A 600V 0.17Ω 62nC Max Min Typ Typ G S T0262 Standard Metal Heatsink 1=Gate, 2&4=Drain, 3=Source. ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.