Datasheet Summary
Preliminary Data Sheet
ICE20N170B ICE20N170B N-Channel
Enhancement Mode MOSFET
Features
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Increased transconductance performance
- Optimized design for high performance power systems
Product Summary ID V(BR)DSS rDS(on) Qg TA=25oC ID=250uA VGS=10V VDS=480V
20A 600V 0.17Ω 62nC
Max Min Typ Typ
G S T0263 Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source.
ICEMOS AND ITS SISTER PANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED...
