ICE20N170B Description
Preliminary Data Sheet ICE20N170B ICE20N170B N-Channel Enhancement Mode MOSFET.
ICE20N170B Key Features
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Increased transconductance performance
- Optimized design for high performance power systems
- Specifications subject to change
- 640 3 0.1
- 0.17 0.52 4.3