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ICE60N160B

The ICE60N160B is N-Channel Enhancement Mode MOSFET designed by Icemos.

Product Overview

Icemos

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ICE60N160B N-Channel Enhancement Mode MOSFET by Icemos - Datasheet Preview — Datasheet preview – ICE60N160B

Datasheet Details

Part number	ICE60N160B
Manufacturer	Icemos
File Size	638.69 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	ICE60N160B_Icemos.pdf
Additional preview pages of the ICE60N160B datasheet.

Product details

Features

Low rDS(on).
Ultra Low Gate Charge.
High dv/dt capability.
High Unclamped Inductive Switching (UIS) capability.
High peak current capability.
Increased transconductance performance.
Optimized design for high performance power systems Product Summary ID V(BR)DSS rDS(on) Qg TA=25oC ID=250uA VGS=10V VDS=480V D 23.8A 650V 0.14Ω 85nC Max Min Typ Typ G S T0263 Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source. ICEMOS AND ITS SISTER CO.

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Published: Oct 8, 2013 |