| Part number | ICE60N160B |
|---|---|
| Datasheet | ICE60N160B-MicrossComponentspdf |
| File Size | 719.99 KB |
| Manufacturer | Micross |
| Description | N-Channel MOSFET |
|
|
TO-263 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
ICE60N160B | N-Channel Enhancement Mode MOSFET | Icemos |
| Part Number | Description |
|---|---|
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| ICE60N130FP | N-Channel MOSFET |
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| ICE60N150FP | N-Channel MOSFET |
| ICE60N600D | N-Channel MOSFET |
| ICE60N800D | N-Channel MOSFET |
| ICE10N60FP | N-Channel MOSFET |
| ICE10N65 | N-Channel Enhancement Mode MOSFET |
| ICE10N65FP | N-Channel MOSFET |
| ICE10N73 | N-Channel Enhancement Mode MOSFET |
