ICE60N160B Description
TO-263 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt.
ICE60N160B Key Features
- 55 to +150
- 0.14 0.16
- RGS Gate Resistance
- 10 -5- 67
- 1.0 1.2
- 440 -8- 35
- V VGS = 0V, IS = IF ns