ICE60N160B Description
Preliminary Data Sheet ICE60N160B ICE60N160B N-Channel Enhancement Mode MOSFET.
ICE60N160B Key Features
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Increased transconductance performance
- Optimized design for high performance power systems
- Specifications subject to change
- 675 3 0.1
- 0.14 0.42 4