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ICE60N160B - N-Channel Enhancement Mode MOSFET

Features

  • Low rDS(on).
  • Ultra Low Gate Charge.
  • High dv/dt capability.
  • High Unclamped Inductive Switching (UIS) capability.
  • High peak current capability.
  • Increased transconductance performance.
  • Optimized design for high performance power systems Product Summary ID V(BR)DSS rDS(on) Qg TA=25oC ID=250uA VGS=10V VDS=480V D 23.8A 650V 0.14Ω 85nC Max Min Typ Typ G S T0263 Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source. ICEMOS AND ITS SISTER CO.

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Datasheet Details

Part number ICE60N160B
Manufacturer Icemos
File Size 638.69 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ICE60N160B Datasheet
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Preliminary Data Sheet ICE60N160B ICE60N160B N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems Product Summary ID V(BR)DSS rDS(on) Qg TA=25oC ID=250uA VGS=10V VDS=480V D 23.8A 650V 0.14Ω 85nC Max Min Typ Typ G S T0263 Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source. ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
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