Datasheet Details
| Part number | 2SD5702 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.77 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
 2SD5702 Datasheet
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| Part number | 2SD5702 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.77 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
2SD5702 Datasheet
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 16 A 60 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD5702 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4.0A;
IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.0A;
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