Datasheet4U Logo Datasheet4U.com
Inchange Semiconductor logo

3DD301B Datasheet

Manufacturer: Inchange Semiconductor
3DD301B datasheet preview

3DD301B Details

Part number 3DD301B
Datasheet 3DD301B_Inchange.pdf
File Size 202.55 KB
Manufacturer Inchange Semiconductor
Description Silicon Power Transistor
3DD301B page 2

3DD301B Overview

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV vertical output applications.

Similar Datasheets

Brand Logo Part Number Description Manufacturer
Huajing Microelectronics Logo 3DD3010A1 Silicon NPN Transistor Huajing Microelectronics
Huajing Microelectronics Logo 3DD3015A1 Silicon NPN Transistor Huajing Microelectronics
Huajing Microelectronics Logo 3DD3015A1-H Silicon NPN bipolar transistor Huajing Microelectronics

3DD301B Distributor

Inchange Semiconductor Datasheets

More from Inchange Semiconductor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts