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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche

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INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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isc Adjustable Voltage Regulator INCHANGE Semiconductor LM317 FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% Li

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Collector Current-IC= 3A(Max.) ·Low Colle

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isc Three Terminal Positive Voltage Regulator 78M05 FEATURES ·Output current in excess of 0.5A ·Output voltage of 5V ·Internal thermal overload prot

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isc Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Lead formed for surface mount applications(NO suf

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3307Z， IIRFB3307Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.8mΩ ·Enhanceme

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isc N-Channel MOSFET Transistor BUK9240-100A FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSC5026 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(

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INCHANGE Semiconductor isc Three Terminal Negative Voltage Regulator L7915CV FEATURES ·Output current in excess of 1A ·Output voltage of -15V ·Inte

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isc Three Terminal Positive Voltage Regulator MC7812 FEATURES ·Output current in excess of 1 A ·Output voltage of 12V ·Internal thermal overload pro

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m

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INCHANGE Semiconductor isc Three Terminal Positive Voltage Regulator 7815 FEATURES ·Output current in excess of 1.5A ·Output voltage of 15V ·Intern

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF531 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector Power Dissipation : PC= 25 W@ TC=

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Schottky Barrier Rectifier FEATURES ·Low Forward Voltage ·150℃ Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Effi

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