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3DD301D Datasheet

Manufacturer: Inchange Semiconductor
3DD301D datasheet preview

3DD301D Details

Part number 3DD301D
Datasheet 3DD301D_Inchange.pdf
File Size 201.75 KB
Manufacturer Inchange Semiconductor
Description Silicon Power Transistor
3DD301D page 2

3DD301D Overview

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV vertical output applications.

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