Datasheet4U Logo Datasheet4U.com

3DD303B - Silicon Power Transistor

📥 Download Datasheet

Preview of 3DD303B PDF
datasheet Preview Page 2

Datasheet Details

Part number 3DD303B
Manufacturer Inchange
File Size 201.98 KB
Description Silicon Power Transistor
Datasheet download datasheet 3DD303B_Inchange.pdf

3DD303B Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max) @IC= 0.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV vertical output applications.

📁 3DD303B Similar Datasheet

  • 3DD3010A1 - Silicon NPN Transistor (Huajing Microelectronics)
  • 3DD3015A1 - Silicon NPN Transistor (Huajing Microelectronics)
  • 3DD3015A1-H - Silicon NPN bipolar transistor (Huajing Microelectronics)
  • 3DD3015A3 - Silicon NPN Transistor (Huajing Microelectronics)
  • 3DD3020A3 - Silicon NPN Transistor (Huajing Microelectronics)
  • 3DD3020A3-H - Silicon NPN bipolar transistor (Huajing Microelectronics)
  • 3DD3020A4 - Silicon NPN bipolar transistor (Huajing Microelectronics)
  • 3DD3020A6 - Silicon NPN Transistor (Huajing Microelectronics)
Other Datasheets by Inchange
Published: |