Datasheet4U Logo Datasheet4U.com

3DD303B Datasheet - Inchange

3DD303B Silicon Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max) @IC= 0.5A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for B/W TV vertical output applications. ABSO.

3DD303B_Inchange.pdf

Preview of 3DD303B PDF
3DD303B Datasheet Preview Page 2

Datasheet Details

Part number:

3DD303B

Manufacturer:

Inchange

File Size:

201.98 KB

Description:

Silicon power transistor.

📁 Related Datasheet

3DD303A Silicon Power Transistor (Inchange)

3DD303C Silicon Power Transistor (Inchange)

3DD3010A1 Silicon NPN Transistor (Huajing Microelectronics)

3DD3015A1 Silicon NPN Transistor (Huajing Microelectronics)

3DD3015A1-H Silicon NPN bipolar transistor (Huajing Microelectronics)

3DD3015A3 Silicon NPN Transistor (Huajing Microelectronics)

3DD301B Silicon Power Transistor (Inchange)

3DD301C Silicon Power Transistor (Inchange)

TAGS

3DD303B 3DD303B Silicon Power Transistor Inchange

3DD303B Distributor