2N3019 - Silicon NPN Power Transistor

Datasheet Details

Part number	2N3019
Manufacturer	Inchange Semiconductor
File Size	87.18 KB
Description	Silicon NPN Power Transistor
Datasheet	2N3019 Datasheet
Additional preview pages of the 2N3019 datasheet.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3019 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 1A PC Collector Power Dissipation@TC=25℃ 5 W Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Rth j-c Thermal Resistance,Junction to Ambient Thermal Resistance,Junction to Case MAX 217 35 UNIT ℃/W ℃/W isc website：www.iscsemi.

Published: Jun 22, 2016 |