| Part Number | 2N3019 Datasheet |
|---|---|
| Manufacturer | Seme LAB |
| Overview |
2N3019
MECHANICAL DATA Dimensions in mm (inches)
8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335)
NPN SILICON TRANSISTOR
FEATURES
• NPN High Voltage Planar Transistor • Hermetic TO39 Package
4.19.
* NPN High Voltage Planar Transistor * Hermetic TO39 Package 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. * Full Screening Options Available 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45˚ TO39 PA. |
2N3019 Datasheet and Specifications PDF
The 2N3019 is a NPN SILICON TRANSISTOR.
| Part Number | 2N3019 Datasheet |
|---|---|
| Description | Low Power Transistor |
| Manufacturer | onsemi |
| Overview |
2N3019, 2N3019S, 2N3700
Low Power Transistors
NPN Silicon
Features
• MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characterist.
* MIL *PRF *19500/391 Qualified * Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector *Emitter Voltage VCEO 80 Collector *Base Voltage VCBO 140 Emitter *Base Voltage VEBO 7.0 Collector Current * Continuous IC 1.0 T. |
| Part Number | 2N3019 Datasheet |
|---|---|
| Description | NPN medium power transistor |
| Manufacturer | NXP Semiconductors |
| Overview |
NPN medium power transistor in a TO-39 metal package.
1 handbook, halfpage 2
2N3019
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
3 2
3
MAM317
1
Fig.1 Simplified outlin.
* High current (max. 1 A) * Low voltage (max. 80 V). APPLICATIONS * Amplifier and switching circuits. DESCRIPTION NPN medium power transistor in a TO-39 metal package. 1 handbook, halfpage 2 2N3019 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 3 MAM317 1 Fig.1 Sim. |
| Part Number | 2N3019 Datasheet |
|---|---|
| Description | SMALL SIGNAL NPN TRANSISTOR |
| Manufacturer | STMicroelectronics |
| Overview | The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-. high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC Ptot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Total Dissipation at Tamb ≤ 25 oC at T. |