2N3019
2N3019 is Low Power Transistor manufactured by onsemi.
Features
- MIL- PRF- 19500/391 Qualified
- Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector
- Emitter Voltage
VCEO
Collector
- Base Voltage
VCBO
Emitter
- Base Voltage
VEBO
Collector Current
- Continuous
IC 1.0
Total Device Dissipation @ TA = 25°C 2N3019, 2N3019S 2N3700
800 500
Unit Vdc Vdc Vdc Adc m W
Total Device Dissipation @ TC = 25°C 2N3019, 2N3019S 2N3700
W 5.0 1.0
Operating and Storage Junction Temperature Range
TJ, Tstg
- 65 to +200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction to Ambient 2N3019, 2N3019S 2N3700
Rq JA
°C/W 195 325
Thermal Resistance, Junction to Case 2N3019, 2N3019S...
