STMicroelectronics 2N3019
The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.| Part No. | 2N3019 |
|---|---|
| Datasheet | 2N3019 Download |
| Manufacturer |  STMicroelectronics |
| Description | SMALL SIGNAL NPN TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VCBO VCEO VEBO IC Ptot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Total Dissipation at Tamb ≤ 25 oC at TC ≤ 25 oC Storage Temperature Max. Operating Junction Temperature September 2002 Value 140 80 7 1 0.8 5 -65 to 175 175 Unit V V V A W W oC oC 1/4 2N3019 THERMAL DATA Rthj-case Thermal Resistance Junction-Case Rthj-amb Thermal Resistance Junction-Ambient Max Max 30 187.5 oC/W oC/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 90 V VCB = 90 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut-off Current (IC = 0) Collector-Base Breakdown Voltage (IE = 0) Collector-Emitter Breakdown Voltage (IB = 0) Emitter-Base Breakdown Voltage (IC = 0) Collector-Emitter S...
