Continental Device India 2N3019
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | 2N3019 |
|---|---|
| Datasheet | 2N3019 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
These Transistors are also Suitable for High Current AmplifierAPPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL VALUE Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25º C Power Dissipation@ Tc=25ºC Junction Temperature Storage Temperature VCEO VCBO VEBO ICM PD Tj Tstg THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c)ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise) 80 140 7 1 800 5 +200 -65 to +200 218.7 35DESCRIPTION
SYMBOL TEST CONDITION MIN MAX Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Leakage Current Emitter Le
