SYMBOL
VALUE
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25º C Power Dissipation@ Tc=25ºC Junction Temperature Storage Temperature
VCEO VCBO VEBO
ICM PD
Tj Tstg
THERMAL RESISTANCE Junction to Ambient Junction to Case
Rth(j-a) R
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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3019 2N3020
TO-39 Metal Can Package
Designed for use in General Purpose Amplifier and High Speed Switching Applications These Transistors are also Suitable for High Current Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25º C Power Dissipation@ Tc=25ºC Junction Temperature Storage Temperature
VCEO VCBO VEBO
ICM PD
Tj Tstg
THERMAL RESISTANCE Junction to Ambient Junction to Case
Rth(j-a) Rth(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
80 140
7 1 800 5 +200 -65 to +
2N3019 Datasheet
