NXP Semiconductors 2N3019
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | 2N3019 |
|---|---|
| Datasheet | 2N3019 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN medium power transistor |
| Buy | Stock & Price |
FEATURES
● High current (max. 1 A)● Low voltage (max. 80 V).
APPLICATIONS
● Amplifier and switching circuits.DESCRIPTION
NPN medium power transistor in a TO-39 metal package. 1 handbook, halfpage 2 2N3019 PINNING PIN 1 2 3 emitter base collector, connected to caseDESCRIPTION
3 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Tamb ≤ 25 °C Tcase ≤ 25 °C IC = 150 mA; VCE = 10 V IC = 50 mA; VCE = 10 V; f = 100 MHz open emitter open base CONDITIONS − − − − − 100 100 MIN. MAX. 140 80 1 800 5 300 − MHz V V A mW W UNIT 1997 Jun 19 2 Philips Semiconductors Product specification NPN medium power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltag...
