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2N3019

2N3019 is NPN medium power transistor manufactured by NXP Semiconductors.
2N3019 datasheet preview

2N3019 Datasheet

Part number 2N3019
Datasheet 2N3019 Datasheet PDF (Download)
File Size 51.72 KB
Manufacturer NXP Semiconductors
Description NPN medium power transistor
2N3019 page 2 2N3019 page 3

2N3019 Overview

NPN medium power transistor in a TO-39 metal package. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Tamb ≤ 25 °C Tcase ≤ 25 °C IC = 150 mA; f = 100 MHz open emitter open base CONDITIONS − − − − − 100 100 MIN.

2N3019 Key Features

  • High current (max. 1 A)
  • Low voltage (max. 80 V)

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