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2N3019 - NPN medium power transistor

General Description

NPN medium power transistor in a TO-39 metal package.

Fig.1 Simplified outline (TO-39) and symbol.

Key Features

  • High current (max. 1 A).
  • Low voltage (max. 80 V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N3019 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 Philips Semiconductors Product specification NPN medium power transistor FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Amplifier and switching circuits. DESCRIPTION NPN medium power transistor in a TO-39 metal package. 1 handbook, halfpage 2 2N3019 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol.