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2N3019HR Datasheet Hi-rel NPN Bipolar Transistor

Manufacturer: STMicroelectronics

Overview: 2N3019HR Hi-Rel NPN bipolar transistor 80 V, 1 A Datasheet — production.

General Description

The 2N3019HR is a silicon planar epitaxial NPN transistor in a TO-39 package.

It is specifically designed for aerospace Hi-Rel applications, and ESCC qualified in accordance with the 5201-003 specification.

In case of discrepancies between this datasheet and ESCC detailed specification, the latter prevails.

Key Features

  • BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range 80 V 1A > 100 -65°C to +200°C.
  • Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1. Internal schematic diagram TO-39.

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