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2N3019, 2N3019S
NPN Low Power Silicon Transistor
Features
• JAN, JANTX, JANTXV, JANS and JANSR Qualified to MIL-PRF-19500/391
• Lightweight & Low Power • Ideal for Space, Military, & Other High Reliability
Applications • Available in TO-5 and TO-39 packages
Rev. V2
Electrical Characteristics (TA = +25oC unless otherwise specified)
Parameter
Test Conditions
Symbol Units Min.
Collector - Emitter Breakdown Voltage
IC = 30 mA
V(BR)CEO V dc
80
Collector - Base Cutoff Current
VCB = 140 V
ICBO1 µA dc
—
Emitter - Base Cutoff Current
VEB = 7 V
IEBO1 µA dc
—
Collector - Emitter Cutoff Current
VCE = 90 V
ICES1 nA dc
—
Emitter - Base Cutoff Current
VEB = 5 Vdc
IEBO2 nA dc
—
Forward Current Transfer Ratio
VCE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 0.