The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Technical Data TRANSISTOR
maximum ratings
Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty
140.0 V
80.0 V
7.0 V
1.0 A
empty
A
5.0 W
35.0 °C/W
200.0 °C
empty empty
NO. TYPE empty empty CASE empty empty
2N3019S-M NPN empty empty TO-39 MIL-S-19500 BURN-IN 48h/125°C
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. BVCBO
IC = 100.0 µA
140.0
-
V
2. BVCEO
IC = 30.0 mA
(1) 80.0
-
V
3. BVEBO
IE = 100.0 µA
7.0 -
V
4. hFE
IC = 0.1 mA, VCE = 10.0 V
(1) 50.0
-
-
5. hFE
IC = 10.0 mA, VCE = 10.
2N3019S-M Datasheet
