2N3019S-M
2N3019S-M is TRANSISTOR manufactured by DSI.
Technical Data TRANSISTOR maximum ratings
Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty
140.0 V
80.0 V
7.0 V
1.0 A empty
5.0 W
35.0 °C/W
200.0 °C empty empty
NO. TYPE empty empty CASE empty empty
2N3019S-M NPN empty empty TO-39 MIL-S-19500 BURN-IN 48h/125°C
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. BVCBO
IC = 100.0 µA
- V
2. BVCEO
IC = 30.0 mA
(1) 80.0
- V
3. BVEBO
IE = 100.0...
