Datasheet4U Logo Datasheet4U.com

2N3198 - Silicon PNP Power Transistor

Datasheet Summary

Description

Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMU

📥 Download Datasheet

Datasheet preview – 2N3198

Datasheet Details

Part number 2N3198
Manufacturer Inchange Semiconductor
File Size 171.88 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet 2N3198 Datasheet
Additional preview pages of the 2N3198 datasheet.

📁 Similar Datasheet

  • 2N319 - PNP germanium power transistors (Motorola)
  • 2N3190 - PNP Transistor (SSDI)
  • 2N3195 - PNP Transistor (INCHANGE)
  • 2N3195 - PNP Transistor (SSDI)
  • 2N3196 - Silicon PNP Power Transistors (SavantIC)
  • 2N3196 - PNP Transistor (INCHANGE)
  • 2N3107 - NPN SILICON EPITAXIAL TRANSISTOR (Micro Electronics)
  • 2N3107 - (2N3107 - 2N3110) NPN Silicon AF Medium Amplifiers and Switches (Micro Electronics)
  • 2N3107 - Small Signal Transistors (Central)
  • 2N3108 - Bipolar NPN Device (Semelab Plc)
Other Datasheets by Inchange Semiconductor
  • 2N3197 - Silicon PNP Power Transistor
  • 2N3171 - Silicon PNP Power Transistor
  • 2N3172 - Silicon PNP Power Transistor
  • 2N3173 - Silicon PNP Power Transistor
  • 2N3174 - Silicon PNP Power Transistor
  • 2N3184 - Silicon PNP Power Transistor
  • 2N3185 - Silicon PNP Power Transistor
  • 2N3186 - Silicon PNP Power Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·With TO-3 package ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 75 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W 2N3198 isc website：www.iscsemi.
Published: |