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2N3239 Datasheet Preview

2N3239 Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
APPLICATIONS
·Designed for general purpose high power switch and
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
PC
Collector Power Dissipation@TC=25150
W
TJ
Junction Temperature
175
Tstg
Storage Temperature
-65~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 /W
2N3239
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2N3239 Datasheet Preview

2N3239 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1.33A
VBE(on) Base-Emitter On Voltage
IC= 10A; VCE= 10V
hFE
DC Current Gain
IC= 10A; VCE= 10V
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 4V; f= 1.0MHz
2N3239
MIN MAX UNIT
80
V
1
V
2
V
8.5
25
1.0
MHz
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2N3239
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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2N3239 Datasheet PDF






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