2N3019 - Silicon NPN Power Transistor

Inchange Semiconductor

Datasheet Details

Part number	2N3019
Manufacturer	Inchange Semiconductor
File Size	87.18 KB
Description	Silicon NPN Power Transistor
Datasheet	2N3019 Datasheet

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Other Datasheets by Inchange Semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3019 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 1A PC Collector Power Dissipation@TC=25℃ 5 W Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Rth j-c Thermal Resistance,Junction to Ambient Thermal Resistance,Junction to Case MAX 217 35 UNIT ℃/W ℃/W isc website：www.iscsemi.