Datasheet4U Logo Datasheet4U.com

2N3583 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·Contunuous Collector Current-IC= 1A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 250 175 6 1.0 5.0 1.0 35 200 -65~200 www.DataSheet.net/ UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W isc Website:www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.co.kr/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N3583 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ;

IB= 0 175 V VCE(sat) VBE(on) ICEO ICEX Collector-Emitter Saturation Voltage IC= 1A;

Overview

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor.