Datasheet Details
| Part number | 2N3583 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 406.11 KB |
| Description | SILICON NPN TRANSISTORS |
| Datasheet | 2N3583-CentralSemiconductor.pdf |
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Overview: 2N3583 2N3584 2N3585 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i .
| Part number | 2N3583 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 406.11 KB |
| Description | SILICON NPN TRANSISTORS |
| Datasheet | 2N3583-CentralSemiconductor.pdf |
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: The CENTRAL SEMICONDUCTOR 2N3583 series devices are silicon NPN transistors designed for high speed switching and high voltage amplifier applications.
MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N3583 250 175 6.0 1.0 2N3584 375 250 6.0 2.0 5.0 1.0 35 -65 to +200 5.0 2N3585 500 300 6.0 2.0 UNITS V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N3583 2N3584 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICEV VCE=225V, VEB=1.5V - 1.0 -- ICEV VCE=340V, VEB=1.5V -- - 1.0 ICEV VCE=450V, VEB=1.5V -- -- ICEV VCE=225V, VEB=1.5V, TC=150°C - 3.0 -- ICEV VCE=300V, VEB=1.5V, TC=150°C -- - 3.0 ICEO VCE=150V - 10 - 5.0 IEBO VBE=6.0V - 5.0 - 0.5 BVCEO IC=200mA 175 - 250 - VCE(SAT) IC=1.0A, IB=125mA - 5.0 - 0.75 VBE(SAT) IC=1.0A, IB=100mA -- - 1.4 VBE(ON) VCE=10V, IC=1.0A - 1.4 - 1.4 hFE VCE=10V, IC=100mA 40 - 40 - hFE VCE=10V, IC=500mA 40 200 -- hFE VCE=2.0V, IC=1.0A -- 8.0 80 hFE VCE=10V, IC=1.0A 10 - 25 100 fT VCE=10V, IC=200mA, f=5.0MHz 10 - 10 - Cob VCB=10V, IE=0, f=1.0MHz - 120 - 120 hfe VCE=30V, IC=100mA, f=1.0kHz 25 350 -- tr VCC=200V, IC=1.0A, IB1=100mA, RL=200Ω - - - 3.0 ts VCC=200V, IC=1.0A, IB1=IB2=100mA -- - 4.0 tf VCC=200V, IC=1.0A, IB1=IB2=100mA -- - 3.0 IS/b VCE=100V 350 - 350 - 2N3585 MIN MAX UNITS -- mA -- mA - 1.0 mA -- mA - 3.0 mA - 5.0 mA - 0.5 mA 300 - V - 0.75 V - 1.4 V - 1.4 V 40 - -- 8.0 80 25 100 10 - MHz - 120 pF -- - 3.0 μs - 4.0 μs - 3.0 μs 350 - mA R3 (2-September 2014) 2N3583 2N3584 2N3585 SILICON NPN TRANS
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N3583 | Silicon NPN Transistors | NTE |
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2N3583 | 5 Amp/ 250V/ High Voltage NPN Silicon Power Transistors | Microsemi Corporation |
 |
2N3583 | NPN SILICON POWER TRANSISTORS | Comset Semiconductor |
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2N3583 | Bipolar NPN Device | Seme LAB |
 |
2N3583 | Silicon NPN Power Transistor | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| 2N3584 | SILICON NPN TRANSISTORS |
| 2N3585 | SILICON NPN TRANSISTORS |
| 2N3504 | Small Signal Transistors |
| 2N3505 | Small Signal Transistors |
| 2N3506 | NPN SILICON TRANSISTOR |
| 2N3507 | NPN SILICON TRANSISTOR |
| 2N3545 | Small Signal Transistors |
| 2N3546 | Small Signal Transistors |
| 2N3547 | Small Signal Transistors |
| 2N3548 | Small Signal Transistors |