2N3583 datasheet by Inchange Semiconductor.
| Part number | 2N3583 |
|---|---|
| Datasheet | 2N3583_InchangeSemiconductor.pdf |
| File Size | 227.61 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
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·Contunuous Collector Current-IC= 1A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. IB= 0 175 V VCE(sat) VBE(on) ICEO ICEX Collector-Emitter Saturation Voltage...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N3583 | Silicon NPN Transistors | NTE |
 |
2N3583 | 5 Amp/ 250V/ High Voltage NPN Silicon Power Transistors | Microsemi Corporation |
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2N3583 | SILICON NPN TRANSISTORS | Central Semiconductor |
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2N3583 | NPN SILICON POWER TRANSISTORS | Comset Semiconductor |
 |
2N3583 | Bipolar NPN Device | Seme LAB |
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