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2N3583 - Silicon NPN Power Transistor

General Description

Contunuous Collector Current-IC= 1A Power Dissipation-PD=35W @TC= 25℃ Collector-Emitter Saturation Voltage: VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONS Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators,

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3583 DESCRIPTION ·Contunuous Collector Current-IC= 1A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 250 175 6 1.0 5.0 1.0 35 200 -65~200 www.DataSheet.