Datasheet Details
| Part number | 2N3713 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.74 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2N3713 Datasheet
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| Part number | 2N3713 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.74 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2N3713 Datasheet
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·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for medium-speed switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W 2N3713 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N3713 | GENERAL PURPOSE POWER TRANSISTOR | Toshiba |
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2N3713 | SILICON NPN TRANSISTORS | Central Semiconductor |
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2N3713 | NPN silicon power transistors | Motorola |
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2N3713 | Bipolar NPN Device | Seme LAB |
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2N3713 | EPITAXIAL-BASE TRANSISTORS | Comset Semiconductor |
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