Datasheet4U.com

2N3713 - GENERAL PURPOSE POWER TRANSISTOR

Product Overview

Toshiba

📥 Download Datasheet

2N3713 GENERAL PURPOSE POWER TRANSISTOR by Toshiba - Datasheet Preview — Datasheet preview – 2N3713

Datasheet Details

Part number	2N3713
Manufacturer	Toshiba
File Size	87.23 KB
Description	GENERAL PURPOSE POWER TRANSISTOR
Datasheet	2N3713 Datasheet
Additional preview pages of the 2N3713 datasheet.

Product details

Features

. High Gain at High Current . Low Saturation Voltage : VcE(sat) =1 - ov (Max. ) @ IC=5A, Ib=0.5A . Excellent Area of Safe Operatings.

📁 Similar Datasheet

2N3713 - Silicon NPN Power Transistor (Inchange Semiconductor)
2N3713 - SILICON NPN TRANSISTORS (Central Semiconductor)
2N3713 - NPN silicon power transistors (Motorola)
2N3713 - Bipolar NPN Device (Seme LAB)
2N3713 - EPITAXIAL-BASE TRANSISTORS (Comset Semiconductor)
2N3710 - NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS (Micro Electronics)
2N3711 - NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS (Micro Electronics)
2N3712 - NPN Transistor (Motorola)

Other Datasheets by Toshiba

2N3714 - GENERAL PURPOSE POWER TRANSISTOR
2N3715 - GENERAL PURPOSE POWER TRANSISTOR
2N3716 - GENERAL PURPOSE POWER TRANSISTOR
2N3789 - SILICON PNP Transistor
2N3790 - Silicon PNP Transistor
2N3791 - SILICON PNP Transistor

Published: Jul 16, 2018 |