Toshiba 2N3713
GENERAL PURPOSE POWER TRANSISTOR
APPLICATIONS
.FEATURES
: . High Gain at High Current . Low Saturation Voltage : VcE(sat) =1 - ov (Max.) @ IC=5A, Ib=0.5A . Excellent Area of Safe OperatingsMAXIMUM RATINGS
(●Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Thermal Resistance Junction Temperature ' Storage Temperature Range SYMBOL VcBO VCEO VEBO Unit in mm Weight : 12. 6gELECTRICAL CHARACTERISTICS
(Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain ICEX VcE=80V, VBE=-1.5V JCEX V CE=60V, VBE=-1-5V Tc=150°C lEBO VEB=7V, IC=0 ** vCEO(SUS) IC=200mA, Ib=0 nFE V CE=2V, IC=1A V CE=2V, IC=3A Base-Emitter Voltage VBE Saturation Collector-Emitter VcE