2N3713 - GENERAL PURPOSE POWER TRANSISTOR

Toshiba

Key Features

. High Gain at High Current . Low Saturation Voltage : VcE(sat) =1 - ov (Max. ) @ IC=5A, Ib=0.5A . Excellent Area of Safe Operatings.

2N3713 general purpose power transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2N3713
Manufacturer	Toshiba
File Size	87.23 KB
Description	GENERAL PURPOSE POWER TRANSISTOR
Datasheet	2N3713 Datasheet

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SILICON NPN TRIPLE DIFFUSED TYPE 2N3713 GENERAL PURPOSE POWER TRANSISTOR. POWER REGULATOR, SWITCHING AND SOLENOID DRIVES APPLICATIONS. FEATURES: . High Gain at High Current . Low Saturation Voltage : VcE(sat) =1 - ov (Max.) @ IC=5A, Ib=0.5A . Excellent Area of Safe Operatings MAXIMUM RATINGS (•Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Thermal Resistance Junction Temperature ' Storage Temperature Range SYMBOL VcBO VCEO VEBO Unit in mm Weight : 12.